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Can X‐ray spectrum imaging replace backscattered electrons for compositional contrast in the scanning electron microscope?

Identifieur interne : 000501 ( Main/Exploration ); précédent : 000500; suivant : 000502

Can X‐ray spectrum imaging replace backscattered electrons for compositional contrast in the scanning electron microscope?

Auteurs : Dale E. Newbury [États-Unis] ; Nicholas W. M. Ritchie [États-Unis]

Source :

RBID : ISTEX:8165BD5DD8C0272779B8783E37827F9A453DE743

English descriptors

Abstract

The high throughput of the silicon drift detector energy dispersive X‐ray spectrometer (SDD‐EDS) enables X‐ray spectrum imaging (XSI) in the scanning electron microscope to be performed in frame times of 10–100 s, the typical time needed to record a high‐quality backscattered electron (BSE) image. These short‐duration XSIs can reveal all elements, except H, He, and Li, present as major constituents, defined as 0.1 mass fraction (10 wt%) or higher, as well as minor constituents in the range 0.01–0.1 mass fraction, depending on the particular composition and possible interferences. Although BSEs have a greater abundance by a factor of 100 compared with characteristic X‐rays, the strong compositional contrast in element‐specific X‐ray maps enables XSI mapping to compete with BSE imaging to reveal compositional features. Differences in the fraction of the interaction volume sampled by the BSE and X‐ray signals lead to more delocalization of the X‐ray signal at abrupt compositional boundaries, resulting in poorer spatial resolution. Improved resolution in X‐ray elemental maps occurs for the case of a small feature composed of intermediate to high atomic number elements embedded in a matrix of lower atomic number elements. XSI imaging strongly complements BSE imaging, and the SDD‐EDS technology enables an efficient combined BSE‐XSI measurement strategy that maximizes the compositional information. If 10 s or more are available for the measurement of an area of interest, the analyst should always record the combined BSE‐XSI information to gain the advantages of both measures of compositional contrast. SCANNING 33: 174–192, 2011. © 2011 Wiley Periodicals, Inc.

Url:
DOI: 10.1002/sca.20244


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<div type="abstract" xml:lang="en">The high throughput of the silicon drift detector energy dispersive X‐ray spectrometer (SDD‐EDS) enables X‐ray spectrum imaging (XSI) in the scanning electron microscope to be performed in frame times of 10–100 s, the typical time needed to record a high‐quality backscattered electron (BSE) image. These short‐duration XSIs can reveal all elements, except H, He, and Li, present as major constituents, defined as 0.1 mass fraction (10 wt%) or higher, as well as minor constituents in the range 0.01–0.1 mass fraction, depending on the particular composition and possible interferences. Although BSEs have a greater abundance by a factor of 100 compared with characteristic X‐rays, the strong compositional contrast in element‐specific X‐ray maps enables XSI mapping to compete with BSE imaging to reveal compositional features. Differences in the fraction of the interaction volume sampled by the BSE and X‐ray signals lead to more delocalization of the X‐ray signal at abrupt compositional boundaries, resulting in poorer spatial resolution. Improved resolution in X‐ray elemental maps occurs for the case of a small feature composed of intermediate to high atomic number elements embedded in a matrix of lower atomic number elements. XSI imaging strongly complements BSE imaging, and the SDD‐EDS technology enables an efficient combined BSE‐XSI measurement strategy that maximizes the compositional information. If 10 s or more are available for the measurement of an area of interest, the analyst should always record the combined BSE‐XSI information to gain the advantages of both measures of compositional contrast. SCANNING 33: 174–192, 2011. © 2011 Wiley Periodicals, Inc.</div>
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